Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser | Zendy

Chi-Sen Lee | Zendy; P. Bhattacharya | Zendy; Thomas Frost | Zendy; Wei Guo | Zendy

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Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser

Author(s) -

Chi-Sen Lee,

P. Bhattacharya,

Thomas Frost,

Wei Guo

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3535607

Subject(s) - lasing threshold , excited state , quantum dot laser , ground state , quantum dot , laser , materials science , optoelectronics , semiconductor laser theory , differential gain , atomic physics , optics , physics

The measured characteristics of excited state lasing in tunnel injection p-doped InAs quantum dot lasers are reported. Excited state lasing at 1.22 μm is ensured by a high-reflectivity facet coating which is designed to suppress ground state lasing in the devices. The saturation modal gain in the excited states is 56 cm−1, which is a factor of ∼2.5 higher than that of the ground state. The small-signal modulation bandwidth for I=4.5Ith is 13.5 GHz and the differential gain is 1.1×10−15 cm2.

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