Open AccessMonte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length
Author(s) -
Philippe Dollfus,
C. Bru,
P. Hesto
Publication year - 1993
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.353341
Subject(s) - transconductance , monte carlo method , materials science , transistor , optoelectronics , electron , electron mobility , indium gallium arsenide , saturation current , gallium arsenide , condensed matter physics , molecular physics , chemistry , physics , voltage , statistics , mathematics , quantum mechanics
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