Open AccessRetraction: “High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode” [Appl. Phys. Lett. 97, 063104 (2010)]
Author(s) -
Xiangyang Guo,
Xiaohui Wang,
Benkang Chang,
Yijun Zhang,
Pin Gao
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3533377
Subject(s) - photocathode , doping , optoelectronics , quantum efficiency , wide bandgap semiconductor , materials science , condensed matter physics , electron , quantum , electron affinity (data page) , physics , quantum mechanics , molecule
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