Fabrication and characterization of thin, self-supporting germanium single crystals | Zendy

MW Grant | Zendy; P. F. Lyman | Zendy; J. H. Hoogenraad | Zendy; Barbara S. Carlsward | Zendy; D. A. Arms | Zendy; L. E. Seiberling | Zendy; F. Namavar | Zendy

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Fabrication and characterization of thin, self-supporting germanium single crystals

Author(s) -

MW Grant,

P. F. Lyman,

J. H. Hoogenraad,

Barbara S. Carlsward,

D. A. Arms,

L. E. Seiberling,

F. Namavar

Publication year - 1993

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.353108

Subject(s) - materials science , germanium , epitaxy , wafer , thin film , chemical vapor deposition , fabrication , substrate (aquarium) , etching (microfabrication) , isotropic etching , optoelectronics , characterization (materials science) , crystallography , silicon , nanotechnology , chemistry , layer (electronics) , medicine , oceanography , alternative medicine , pathology , geology

Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

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