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High order symmetry interference lithography based nanoimprint
Author(s) -
Alban Letailleur,
Komla Nomenyo,
Stefan Mc Murtry,
Étienne Barthel,
E. Søndergård,
Gilles Lérondel
Publication year - 2011
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3530729
Subject(s) - nanoimprint lithography , materials science , lithography , interference lithography , soft lithography , silicon , replication (statistics) , interference (communication) , next generation lithography , nanotechnology , x ray lithography , layer (electronics) , resist , optoelectronics , electron beam lithography , fabrication , computer science , telecommunications , medicine , channel (broadcasting) , statistics , alternative medicine , mathematics , pathology
International audienceWe report on soft nanoimprint lithography using masters obtained by high order symmetry interference lithography. The use of high order symmetry leads to the formation of three-dimensional structures with features smaller than 40 nm. Masters were realized in silicon in a two-step process without transfer layer. Pure silicon masters allow mechanical stability and potential surface functionalization. We further demonstrate the ability of these masters as mold for nanoimprint lithography. High fidelity replication in hybrid sol-gel and pure silica with conservation of both minute features and long distance organization is observed over large areas

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