Open AccessImprovement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment
Author(s) -
Jong-Lam Lee,
Dojin Kim,
Sung Jae Maeng,
HyungHo Park,
Jin Young Kang,
Yong Tak Lee
Publication year - 1993
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.352931
Subject(s) - mesfet , field effect transistor , schottky barrier , transistor , optoelectronics , breakdown voltage , materials science , schottky diode , gallium arsenide , semiconductor , voltage , electrical engineering , engineering , diode
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