Direct imaging of boron segregation to extended defects in silicon
Author(s) -
S. Duguay,
T. Philippe,
F. Cristiano,
D. Blavette
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3526376
Subject(s) - boron , silicon , materials science , transmission electron microscopy , dislocation , atom probe , rod , crystallographic defect , atom (system on chip) , crystallography , analytical chemistry (journal) , molecular physics , chemistry , nanotechnology , nuclear physics , metallurgy , physics , medicine , alternative medicine , composite material , pathology , chromatography , computer science , embedded system
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