Stability of top- and bottom-gate amorphous polymer field-effect transistors | Zendy

Stamatis Georgakopoulos | Zendy; David Sparrowe | Zendy; F. Meyer | Zendy; Maxim Shkunov | Zendy

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Stability of top- and bottom-gate amorphous polymer field-effect transistors

Author(s) -

Stamatis Georgakopoulos,

David Sparrowe,

F. Meyer,

Maxim Shkunov

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3525933

Subject(s) - transistor , materials science , fabrication , optoelectronics , subthreshold swing , field effect transistor , subthreshold conduction , amorphous solid , nanotechnology , electrical engineering , chemistry , voltage , engineering , crystallography , medicine , alternative medicine , pathology

Performance and stability between the top- and bottom-gate field-effect transistor configurations are investigated in dual-gate transistor structures consisting of the same insulator and gate materials. The transistors behave similarly for both gate modes with on/off ratio in excess of 105, subthreshold swing of 0.5–1 V/decade, and mobility of 0.03–0.04 cm2/V s, retained over several months, with fabrication, storage, and characterization, performed in ambient conditions.

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