Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition | Zendy

Lei Wang | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; Qianqian Ren | Zendy; Jiajun Lu | Zendy; Z. H. Chen | Zendy

Open Access

Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition

Author(s) -

Lei Wang,

Hark Hoe Tan,

C. Jagadish,

Qianqian Ren,

Jiajun Lu,

Z. H. Chen

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3522889

Subject(s) - phonon , relaxation (psychology) , materials science , condensed matter physics , strain (injury) , quantum dot , deposition (geology) , optoelectronics , physics , medicine , psychology , social psychology , paleontology , sediment , biology

This paper presents a study on the strain relaxation and phonon confinement effect in InAsSb/InP quantum dashes (QDashes). The phonon mode with a frequency between that of InAs-like longitudinal optical mode and that of InP transverse optical mode is determined to be originated from InAsSb QDashes. Despite the small height of the QDashes, their phonon frequency is found to be mainly determined by the strain relaxation in the dashes. With increasing InAsSb deposition thickness and Sb composition in InAsSb dashes, the phonon mode shows an upward shift of its frequency due to the increased compressive strain. © 2010 American Institute of Physics.

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