High-field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation- doped heterostructures at 300 and 77 K | Zendy

Da Seul Yang | Zendy; P. Bhattacharya | Zendy; Won-Pyo Hong | Zendy; R. Bhat | Zendy; J. R. Hayes | Zendy

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High-field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation- doped heterostructures at 300 and 77 K

Author(s) -

Da Seul Yang,

P. Bhattacharya,

Won-Pyo Hong,

R. Bhat,

J. R. Hayes

Publication year - 1992

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.352154

Subject(s) - heterojunction , doping , field (mathematics) , electron mobility , modulation (music) , materials science , condensed matter physics , analytical chemistry (journal) , optoelectronics , chemistry , physics , mathematics , chromatography , acoustics , pure mathematics

We have measured the high‐field transport characteristics of pseudomorphic InAsxP1−x/InP (0.3≤x≤1.0) modulation doped heterostructures at 300 and 77 K. The field dependent steady state average velocities increase steadily with increase in x. The maximum velocities that have been measured in InAs/InP are 1.7×107 cm/s (2.5 kV/cm) and 3.2×107 cm/s (2.2 kV/cm) at 300 and 77 K, respectively. These are the highest velocities measured in any modulation doped heterostructure. The field dependent channel carrier concentration and mobility data indicate that there is very little real space transfer of carriers at high fields and this is confirmed by results from steady state Monte Carlo calculations

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