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Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy
Author(s) -
Jeremy Bradshaw,
X. J. Song,
J. R. Shealy,
J. G. Zhu,
H. O stergaard
Publication year - 1992
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.352139
Subject(s) - superlattice , transmission electron microscopy , raman spectroscopy , epitaxy , raman scattering , materials science , monolayer , molecular beam epitaxy , diffraction , phonon , condensed matter physics , electron diffraction , scattering , spectroscopy , crystallography , optics , chemistry , optoelectronics , layer (electronics) , nanotechnology , physics , quantum mechanics
We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x‐ray diffraction, and transmission electron microscopy. Satellite peaks in the x‐ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one‐dimensional elastic continuum and linear chain models.

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