Midwave infrared quantum dot avalanche photodiode | Zendy

David Ramírez | Zendy; Jiayi Shao | Zendy; Majeed M. Hayat | Zendy; Sanjay Krishna | Zendy

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Midwave infrared quantum dot avalanche photodiode

Author(s) -

David Ramírez,

Jiayi Shao,

Majeed M. Hayat,

Sanjay Krishna

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3520519

Subject(s) - avalanche photodiode , photocurrent , quantum dot , photodiode , optoelectronics , detector , infrared , quantum efficiency , physics , optics , materials science

We report the first demonstration of a GaAs based avalanche photodiode (APD) operating in the midwave infrared region (3–5 μm). In the device, called the quantum dot avalanche photodiode, an intersubband quantum dots-in-a-well detector is coupled with an APD through a tunnel barrier. Using this approach, we have increased the photocurrent and reached a conversion efficiency of 12%, which is one of the highest reported conversion efficiencies for any quantum dot detector.

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