Impact of stress on the recombination at metal precipitates in silicon | Zendy

Paul Gundel | Zendy; Martin C. Schubert | Zendy; Friedemann D. Heinz | Zendy; Wolfram Kwapil | Zendy; Wilhelm Warta | Zendy; Gema MartínezCriado | Zendy; Manfred Reiche | Zendy; Eicke R. Weber | Zendy

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Impact of stress on the recombination at metal precipitates in silicon

Author(s) -

Paul Gundel,

Martin C. Schubert,

Friedemann D. Heinz,

Wolfram Kwapil,

Wilhelm Warta,

Gema MartínezCriado,

Manfred Reiche,

Eicke R. Weber

Publication year - 2010

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3511749

Subject(s) - recombination , silicon , materials science , metal , stress (linguistics) , chemical physics , metallurgy , chemistry , biochemistry , linguistics , philosophy , gene

Metals corrupt the performance of silicon solar cells severely. In this paper we investigate the recombination activity of metal precipitates and present a strong positive correlation between their recombination activity and the stress around them, independent of the type of metal forming the precipitate. This fundamental observation suggests that stress, together with the size of the precipitate, has a dominant effect on the recombination activity of metallic precipitates. We explain the recombination enhancing effect of stress near precipitates by the strong piezoresistance of silicon

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