Open AccessComment on ‘‘Rectification in heavily doped p-type GaAs/AlAs heterojunctions’’ [J. Appl. Phys. 70, 1081 (1991)]
Author(s) -
E. Zeeb,
K.J. Ebeling
Publication year - 1992
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.350514
Subject(s) - rectification , heterojunction , doping , condensed matter physics , gallium arsenide , voltage , materials science , optoelectronics , physics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom