Open AccessErratum: “Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor” [Appl. Phys. Lett. 97, 082106 (2010)]
Author(s) -
Chiara Ciccarelli,
B. G. Park,
S. Ogawa,
A. J. Ferguson,
J. Wunderlich
Publication year - 2010
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3501973
Subject(s) - magnetoresistance , silicon , field effect transistor , materials science , transistor , metal , semiconductor , optoelectronics , condensed matter physics , oxide , field (mathematics) , nanotechnology , electrical engineering , physics , metallurgy , magnetic field , engineering , quantum mechanics , mathematics , voltage , pure mathematics
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