Response to “Comment on ‘Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence’” [Appl. Phys. Lett. 97, 166101 (2010)]

: The authors are aware that there are number of theoretical models available to simulate cathodoluminescence (CL) contrast as a function of the distance, r, from a nonradiative defect. In our letter1 a simple expression, C(r)=C0 exp(−r/L)C(r)=C0 exp(−r/L), was chosen to compare the diffusion length, L, from GaN samples with different n-doping levels over a range of low electron beam energies. This approach is widely used in other studies of CL dislocation contrast as pointed out in the comment on the letter and it was found to provide an acceptable fit to the experimental CL contrast data