English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

: The authors are aware that there are number of theoretical models available to simulate cathodoluminescence (CL) contrast as a function of the distance, r, from a nonradiative defect. In our letter1 a simple expression, C(r)=C0 exp(−r/L)C(r)=C0 exp(−r/L), was chosen to compare the diffusion length, L, from GaN samples with different n-doping levels over a range of low electron beam energies. This approach is widely used in other studies of CL dislocation contrast as pointed out in the comment on the letter and it was found to provide an acceptable fit to the experimental CL contrast data

applied physics letters

Response to “Comment on ‘Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence’” [Appl. Phys. Lett. 97, 166101 (2010)]