Open AccessHigh oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)
Author(s) -
Mario El Kazzi,
Clément Merckling,
Guillaume SaintGirons,
G. Grenet,
Mathieu G. Silly,
Fausto Sirotti,
G. Hollinger
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3499280
Subject(s) - epitaxy , x ray photoelectron spectroscopy , synchrotron radiation , materials science , substrate (aquarium) , thin film , silicon , photoemission spectroscopy , synchrotron , oxidation state , crystallography , analytical chemistry (journal) , chemistry , optoelectronics , optics , nanotechnology , layer (electronics) , nuclear magnetic resonance , metal , metallurgy , chromatography , oceanography , physics , geology
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