Open AccessO 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates
Author(s) -
L. Lamagna,
C. Wiemer,
Michele Perego,
S.N. Volkos,
S. Baldovino,
D. Tsoutsou,
Sylvie SchammChardon,
PierreEugène Coulon,
M. Fanciulli
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3499258
Subject(s) - dielectric , materials science , annealing (glass) , atomic layer deposition , lanthanum oxide , oxide , high κ dielectric , germanate , hexagonal phase , thin film , analytical chemistry (journal) , hexagonal crystal system , mineralogy , optoelectronics , nanotechnology , crystallography , composite material , chemistry , metallurgy , doping , chromatography
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