Switching speeds in double-barrier resonant-tunneling diode structures | Zendy

R. K. Mains | Zendy; G.I. Haddad | Zendy

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Switching speeds in double-barrier resonant-tunneling diode structures

Author(s) -

R. K. Mains,

G.I. Haddad

Publication year - 1991

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.349726

Subject(s) - quantum tunnelling , diode , classification of discontinuities , transient (computer programming) , resonant tunneling diode , rectangular potential barrier , physics , voltage , schrödinger equation , optoelectronics , current (fluid) , quantum well , condensed matter physics , materials science , quantum mechanics , laser , mathematical analysis , mathematics , computer science , thermodynamics , operating system

Switching speeds are calculated for GaAs‐AlGaAs resonant‐tunneling diode structures with different barrier widths from the time‐dependent Schrödinger equation. The speed is determined by monitoring the device current as the bias voltage is instantaneously switched. Effective mass discontinuities at the barrier and quantum well edges are included. Comparisons with previously published results using the wave packet approach are given. It is found that the turn‐off transient is dominated by the lifetime of the quasibound state; however, care must be used in calculating the lifetime

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