Reply to ‘‘Comment on ‘Negative capacitance at metal‐semiconductor interfaces’ ’’ [J. Appl. Phys.70, 1090 (1991)] | Zendy

Xu Wu | Zendy; H. L. Evans | Zendy; E.S. Yang | Zendy

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Reply to ‘‘Comment on ‘Negative capacitance at metal‐semiconductor interfaces’ ’’ [J. Appl. Phys.70, 1090 (1991)]

Author(s) -

Xu Wu,

H. L. Evans,

E.S. Yang

Publication year - 1991

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.349678

Subject(s) - admittance , schottky diode , schottky barrier , condensed matter physics , capacitance , diode , semiconductor , physics , materials science , quantum mechanics , electrode , electrical impedance

The origin of the excess admittance at a forward-biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority-carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority-carrier effect cannot account for the experimental observations.link_to_subscribed_fulltex

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