Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals | Zendy

Ajay Kumar | Zendy; Jai Prakash | Zendy; Mohd Taukeer Khan | Zendy; S.K. Dhawan | Zendy; A. M. Biradar | Zendy

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Memory effect in cadmium telluride quantum dots doped ferroelectric liquid crystals

Author(s) -

Ajay Kumar,

Jai Prakash,

Mohd Taukeer Khan,

S.K. Dhawan,

A. M. Biradar

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3495780

Subject(s) - cadmium telluride photovoltaics , quantum dot , ferroelectricity , materials science , dielectric , doping , optoelectronics , cadmium , metallurgy

A pronounced memory effect has been observed in cadmium telluride quantum dots (CdTe-QDs) doped ferroelectric liquid crystals (FLCs) by using dielectric and electro-optical methods. The memory effect has been attributed to the charge storage on the CdTe-QDs upon the application of dc bias across the sample cell. The FLC molecules remain in the switched state in vicinity of the charge stored on QDs even after removal of bias. It has been observed that the memory effect depends on doping concentrations of CdTe-QDs and the FLC material used

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