Open AccessDefect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth
Author(s) -
Kaoru Toko,
Takanori Tanaka,
Yasuharu Ohta,
Taizoh Sadoh,
Masanobu Miyao
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3493184
Subject(s) - transmission electron microscopy , materials science , stacking fault , crystal growth , condensed matter physics , insulator (electricity) , crystallography , melting temperature , stacking , orientation (vector space) , optoelectronics , dislocation , nanotechnology , chemistry , composite material , nuclear magnetic resonance , geometry , physics , mathematics
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