Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage | Zendy

G. Jolley | Zendy; Hao Lu | Zendy; Lan Fu | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

Open Access

Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Author(s) -

G. Jolley,

Hao Lu,

Lan Fu,

Hark Hoe Tan,

C. Jagadish

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3492836

Subject(s) - quantum dot , open circuit voltage , solar cell , optoelectronics , recombination , materials science , gallium arsenide , multiple exciton generation , theory of solar cells , thermal , electron , quantum well , voltage , solar cell efficiency , physics , chemistry , optics , biochemistry , quantum mechanics , gene , laser , meteorology

Thanks are due to the Australian Research Council for the financial support of this research and the Australian National Fabrication Facility for access to the facilities used in this work.

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