Influence of Te concentration on the infrared cathodoluminescence of GaAs:Te wafers | Zendy

Bianchi Méndez | Zendy; J. Piqueras | Zendy

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Influence of Te concentration on the infrared cathodoluminescence of GaAs:Te wafers

Author(s) -

Bianchi Méndez,

J. Piqueras

Publication year - 1991

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.348636

Subject(s) - cathodoluminescence , wafer , infrared , doping , scanning electron microscope , materials science , analytical chemistry (journal) , infrared spectroscopy , intensity (physics) , optoelectronics , optics , chemistry , luminescence , physics , organic chemistry , chromatography , composite material

Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape

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