PO 2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+δ thin films | Zendy

Jian Liu | Zendy; Gregory Collins | Zendy; Ming Liu | Zendy; Chonglin Chen | Zendy; Jiechao Jiang | Zendy; Efstathios I. Meletis | Zendy; Qingyu Zhang | Zendy; Chuang Dong | Zendy

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PO 2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+δ thin films

Author(s) -

Jian Liu,

Gregory Collins,

Ming Liu,

Chonglin Chen,

Jiechao Jiang,

Efstathios I. Meletis,

Qingyu Zhang,

Chuang Dong

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3484964

Subject(s) - partial pressure , materials science , thin film , oxygen , epitaxy , optoelectronics , atmospheric temperature range , electrical conductor , high resistance , composite material , nanotechnology , chemistry , thermodynamics , biology , layer (electronics) , physics , organic chemistry , agronomy

This research was partially supported by Department of Energy under Grant No. DE-FG26-07NT43063, the National Science Foundation under Grant No. NSF-NIRT-0709293, the Texas ARP Program under Grant No. 003656-0103-2007, the State of Texas through the Texas Center for Superconductivity at the University of Houston, and the South Texas Technology Management Program.

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