Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films | Zendy

S. R. Sarath Kumar | Zendy; Mohamed Nejib Hedhili | Zendy; Husam N. Alshareef | Zendy; S. Kasiviswanathan | Zendy

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Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

Author(s) -

S. R. Sarath Kumar,

Mohamed Nejib Hedhili,

Husam N. Alshareef,

S. Kasiviswanathan

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3481800

Subject(s) - electrical resistivity and conductivity , indium , doping , analytical chemistry (journal) , materials science , indium tin oxide , tin , oxide , thin film , charge (physics) , oxidation state , inorganic chemistry , metal , chemistry , metallurgy , nanotechnology , physics , optoelectronics , chromatography , quantum mechanics

Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase

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