Open AccessEfficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition
Author(s) -
Sébastien Cueff,
Christophe Labbé,
Julien Cardin,
JeanLouis Doualan,
L. Khomenkova,
Khalil Hijazi,
Olivier Jambois,
B. Garrido,
R. Rizk
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3481375
Subject(s) - photoluminescence , nanoclusters , annealing (glass) , silicon , materials science , ion , silicon oxide , sputter deposition , excitation , analytical chemistry (journal) , optoelectronics , thin film , chemical engineering , sputtering , nanotechnology , chemistry , metallurgy , silicon nitride , organic chemistry , engineering , chromatography , electrical engineering
International audienceThis study investigates the influence of the deposition temperature Td on the Si-mediated excitation of Er ions within silicon-rich silicon oxide layers obtained by magnetron cosputtering. For Td exceeding 200 °C, an efficient indirect excitation of Er ions is observed for all as-deposited samples. The photoluminescence intensity improves gradually up to a maximum at Td=600 °C before decreasing for higher Td values. The effects of this “growth-induced annealing” are compared to those resulting from the same thermal budget used for the “classical” approach of postdeposition annealing performed after a room temperature deposition. It is demonstrated that the former approach is highly beneficial, not only in terms of saving time but also in the fourfold enhancement of the Er photoluminescence efficiency
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