A nanoscale Ti/GaAs metal-semiconductor hybrid sensor for room temperature light detection | Zendy

A. K. M. Newaz | Zendy; Woojin Chang | Zendy; Kirk Wallace | Zendy; L. C. Edge | Zendy; Samuel A. Wickline | Zendy; Rashid Bashir | Zendy; A. M. Gilbertson | Zendy; L. F. Cohen | Zendy; S. A. Solin | Zendy

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A nanoscale Ti/GaAs metal-semiconductor hybrid sensor for room temperature light detection

Author(s) -

A. K. M. Newaz,

Woojin Chang,

Kirk Wallace,

L. C. Edge,

Samuel A. Wickline,

Rashid Bashir,

A. M. Gilbertson,

L. F. Cohen,

S. A. Solin

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3480611

Subject(s) - materials science , optoelectronics , nanosensor , semiconductor , schottky diode , nanoscopic scale , schottky barrier , metal , nanotechnology , diode , metallurgy

We report an individually addressable Ti∕GaAs metal-semiconductor hybrid optical nanosensor with positive photoresistance and a sensitivity that increases as the device dimensions shrink. The underlying physics relates to the crossover from ballistic to diffusive transport of the photoinduced carriers and the geometric enhancement of the effect associated with a Schottky-barrier-coupled parallel metal shunt layer. For a 250 nm device under 633 nm illumination we observe a specific detectivity of D(*)=5.06×10(11) cm √Hz∕W with a dynamic response of 40 dB.

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