Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes | Zendy

Elizabeth Rangel | Zendy; Elison Matioli | Zendy; Hung-Tse Chen | Zendy; YongSeok Choi | Zendy; Claude Weisbuch | Zendy; James S. Speck | Zendy; Evelyn L. Hu | Zendy

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Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

Author(s) -

Elizabeth Rangel,

Elison Matioli,

Hung-Tse Chen,

YongSeok Choi,

Claude Weisbuch,

James S. Speck,

Evelyn L. Hu

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3480421

Subject(s) - light emitting diode , materials science , optoelectronics , diode , photonic crystal , absorption (acoustics) , optics , semiconductor , wide bandgap semiconductor , thin film , nanotechnology , composite material , physics

Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 μm were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded only a slight improvement in total light output over the 3.45-μm-thick PhC LEDs. Simulations indicate that, except for ultrathin devices well below 800 nm, the balance between PhC extraction and metal absorption at the backside mirror results in modal extraction efficiencies that are almost independent of device thickness, but highly dependent on mirror reflectivity.

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