Open AccessResponse to “Comment on ‘Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor’ ” [Appl. Phys. Lett. 97, 096101 (2010)]
Author(s) -
Arash Takshi,
Alexandros Dimopoulos,
John D. W. Madden
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3475396
Subject(s) - organic semiconductor , field effect transistor , schottky barrier , transistor , metal–semiconductor junction , semiconductor , optoelectronics , schottky diode , materials science , metal , field (mathematics) , condensed matter physics , physics , quantum mechanics , voltage , metallurgy , mathematics , diode , pure mathematics
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