Open AccessDoping Incorporation in InAs nanowires characterized by capacitance measurements
Author(s) -
Gvidas Astromskas,
Kristian Storm,
O. Karlström,
Philippe Caroff,
Magnus T. Borgström,
LarsErik Wernersson
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3475356
Subject(s) - nanowire , materials science , doping , dopant , capacitance , optoelectronics , field effect transistor , capacitor , semiconductor , threshold voltage , transistor , surface charge , nanotechnology , voltage , condensed matter physics , analytical chemistry (journal) , electrode , chemistry , electrical engineering , physics , chromatography , engineering
Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 21018 to 11019 cm−3, while the surface charge density exceeds 51012 cm−2 and is shown to increase with higher dopant precursor molar fraction. © 2010 American Institute of Physics. doi:10.1063/1.3475356 I
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