Open AccessStructural, electrical, and optical properties of CuGaSe2 rf sputtered thin films
Author(s) -
I. Mártil,
J. Santamarı́a,
G. González-Dı́az,
Francisco Sánchez Quesada
Publication year - 1990
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.347113
Subject(s) - electrical resistivity and conductivity , materials science , amorphous solid , thin film , sputtering , crystallite , substrate (aquarium) , single crystal , grain boundary , analytical chemistry (journal) , grain size , thermal conduction , sputter deposition , condensed matter physics , crystallography , chemistry , microstructure , composite material , metallurgy , nanotechnology , physics , oceanography , engineering , chromatography , geology , electrical engineering
Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se‐excess films are obtained, showing high resistivity (≊103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single‐crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single‐crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T<150 K), and a grain boundary limited conduction process at the higher measurementstemperature (T>150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties
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