Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy | Zendy

T. Hakkarainen | Zendy; Olivier Douhéret | Zendy; S. Anand | Zendy; Lan Fu | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

Author(s) -

T. Hakkarainen,

Olivier Douhéret,

S. Anand,

Lan Fu,

Hark Hoe Tan,

C. Jagadish

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3467138

Subject(s) - quantum dot , spreading resistance profiling , materials science , doping , microscopy , gallium arsenide , optoelectronics , characterization (materials science) , nanotechnology , optics , physics

T. Hakkarainen, O. Douheret, and S. Anand would like to acknowledge the Swedish Research Council VR for fi- nancial support and the Kurt-Alice Wallenberg KAW foundation for financing the microscope. L. Fu, H. H. Tan, and C. Jagadish would like to acknowledge the Australian Research Council ARC for financial support and Australian National Fabrication Facility ANFF for access to the facilities.

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