Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage | Zendy

Mathias Ziegler | Zendy; Martin Hempel | Zendy; H. Larsen | Zendy; Jens W. Tomm | Zendy; Peter E. Andersen | Zendy; Sønnik Clausen | Zendy; Stella N. Elliott | Zendy; Thomas Elsaesser | Zendy

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Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

Author(s) -

Mathias Ziegler,

Martin Hempel,

H. Larsen,

Jens W. Tomm,

Peter E. Andersen,

Sønnik Clausen,

Stella N. Elliott,

Thomas Elsaesser

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3463039

Subject(s) - laser , semiconductor laser theory , materials science , diode , semiconductor , optoelectronics , resolution (logic) , optics , semiconductor device , thermal , physics , nanotechnology , thermodynamics , layer (electronics) , artificial intelligence , computer science

The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.

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