Open AccessTerahertz response of InGaAs field effect transistors in quantizing magnetic fields
Author(s) -
O. A. Klimenko,
Yu. A. Mityagin,
H. Videlier,
F. Teppe,
N. Dyakonova,
C. Conséjo,
S. Bollaert,
В. Н. Мурзин,
W. Knap
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3462072
Subject(s) - terahertz radiation , magnetoresistance , magnetic field , field effect transistor , transistor , optoelectronics , materials science , condensed matter physics , gallium arsenide , physics , voltage , quantum mechanics
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