Response to ‘‘Comment on ‘Native acceptor levels in Ga-rich GaAs’ ’’ [J. Appl. Phys. 6 5, 596 (1989)]
Author(s) -
J. Łagowski,
M. Bugajski
Publication year - 1990
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.346102
Subject(s) - rebuttal , raman scattering , acceptor , raman spectroscopy , deep level transient spectroscopy , center (category theory) , scattering , materials science , atomic physics , chemistry , condensed matter physics , crystallography , physics , quantum mechanics , optoelectronics , law , political science , silicon
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom