Threshold voltage control in organic thin film transistors with dielectric layer modified by a genetically engineered polypeptide
Author(s) -
Alex Dezieck,
Orb Acton,
Kirsty Leong,
Ersin Emre Ören,
Hong Ma,
Candan Tamerler,
Mehmet Sarıkaya,
Alex K.Y. Jen
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3459978
Subject(s) - threshold voltage , transistor , materials science , organic semiconductor , optoelectronics , pentacene , thin film transistor , dielectric , voltage , peptide , nanotechnology , layer (electronics) , chemistry , electrical engineering , engineering , biochemistry
Precise control over the threshold voltage of pentacene-based organic thin film transistors was achieved by inserting a genetically engineered quartz-binding polypeptide at the semiconductor-dielectric interface. A 30 V range was accessed with the same peptide by adjusting the pH of the solution for peptide assembly while leaving other device properties unaffected. Mobility of 0.1-0.2 cm(2) V-1 s(-1) and on/off current ratio of >10(6) could be achieved for all devices regardless of the presence of the neutral peptide or the peptide assembled in acidic or basic conditions. This shift in threshold voltages is explained by the generation of charged species and dipoles due to variation in assembling conditions. Controlling device characteristics such as threshold voltage is essential for integration of transistors into electronic circuits. (c) 2010 American Institute of Physics. {[}doi: 10.1063/1.3459978]
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom