On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies
Author(s) -
S. Reboh,
F. Schaurich,
A. Declémy,
J.F. Barbot,
M. F. Beaufort,
N. Cherkashin,
P.F.P. Fichtner
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3459884
Subject(s) - microstructure , materials science , annealing (glass) , transmission electron microscopy , ion , silicon , helium , analytical chemistry (journal) , ion implantation , hydrogen , diffraction , fluence , crystallography , composite material , nanotechnology , metallurgy , chemistry , optics , physics , organic chemistry , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom