Open AccessPhase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe
Author(s) -
R. T. Lechner,
G. Springholz,
Mahmood Ul Hassan,
Heiko Groiß,
R. Kirchschlager,
J. Stangl,
N. Hrauda,
G. Bauer
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3459149
Subject(s) - ferromagnetism , magnetic semiconductor , antiferromagnetism , condensed matter physics , molecular beam epitaxy , exchange bias , materials science , epitaxy , phase (matter) , biasing , chemistry , magnetization , magnetic anisotropy , physics , nanotechnology , magnetic field , voltage , layer (electronics) , organic chemistry , quantum mechanics
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