Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates | Zendy

Hayato Takita | Zendy; Hashimoto Norihiko | Zendy; Cong Thanh Nguyen | Zendy; Masahiro Kudo | Zendy; Masashi Akabori | Zendy; Toshi-kazu Suzuki | Zendy

Open Access

Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates

Author(s) -

Hayato Takita,

Hashimoto Norihiko,

Cong Thanh Nguyen,

Masahiro Kudo,

Masashi Akabori,

Toshi-kazu Suzuki

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3459137

Subject(s) - van der waals force , materials science , epitaxy , lift (data mining) , layer (electronics) , thin film , optoelectronics , electron , electron mobility , nanotechnology , chemistry , molecule , organic chemistry , computer science , data mining , physics , quantum mechanics

We investigated InAs ultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAs ultrathin films, such as ∼ 10 000 cm2/V s for ∼ 100 nm thickness and ∼ 7000 cm2/V s for ∼ 20 nm. These carrier mobilities are highest not only for thin films on flexible substrates but also for InAs thin films; higher than those of InAs films grown on GaAs(111)A and membranes fabricated from them

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