Open AccessAdsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy
Author(s) -
J. H. Lee,
Xianglin Ke,
Ranjeev Misra,
Jon F. Ihlefeld,
Xiaoshan Xu,
Zhi-Gang Mei,
T. Heeg,
M. Roeckerath,
J. Schubert,
ZiKui Liu,
J. L. Musfeldt,
P. Schiffer,
Darrell G. Schlom
Publication year - 2010
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3457786
Subject(s) - molecular beam epitaxy , materials science , epitaxy , thin film , band gap , phase (matter) , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , layer (electronics) , organic chemistry , chromatography
We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457786
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