Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs | Zendy

Taeseok Kim | Zendy; Manoj R. Pillai | Zendy; Michael J. Aziz | Zendy; Michael A. Scarpulla | Zendy; O. D. Dubón | Zendy; K. M. Yu | Zendy; Jeffrey W. Beeman | Zendy; M. C. Ridgway | Zendy

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Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs

Author(s) -

Taeseok Kim,

Manoj R. Pillai,

Michael J. Aziz,

Michael A. Scarpulla,

O. D. Dubón,

K. M. Yu,

Jeffrey W. Beeman,

M. C. Ridgway

Publication year - 2010

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3457106

Subject(s) - materials science , thermal conductivity , fluence , amorphous solid , laser , ion , latent heat , alloy , semiconductor , analytical chemistry (journal) , optoelectronics , thermodynamics , optics , composite material , crystallography , chemistry , physics , organic chemistry , chromatography

Some of the authors thank for the support of the Center for Nanoscale Systems (CNS) at Harvard University is acknowledged. Harvard-CNS is a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF award No. ECS-0335765. K. M. Yu and J. W. Beeman were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

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