Open AccessElectron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
Author(s) -
Fiacre Rougieux,
Daniel Macdonald,
A. Cuevas,
S. Ruffell,
J. Schmidt,
Bianca Lim,
Andrew P. Knights
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3456076
Subject(s) - electron mobility , hall effect , silicon , electrical resistivity and conductivity , condensed matter physics , doping , materials science , electron , capacitance , conductivity , analytical chemistry (journal) , optoelectronics , chemistry , electrical engineering , physics , electrode , quantum mechanics , chromatography , engineering
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