Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers | Zendy

Y. L. | Zendy; J. P. Pelz | Zendy

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Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers

Author(s) -

Y. L.,

J. P. Pelz

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3453866

Subject(s) - ambipolar diffusion , schottky barrier , schottky diode , materials science , silicon , dipole , electron , schottky effect , field electron emission , electric field , wafer , metal–semiconductor junction , optoelectronics , condensed matter physics , analytical chemistry (journal) , molecular physics , atomic physics , chemistry , physics , diode , organic chemistry , chromatography , quantum mechanics

Four-terminal ambipolar ballistic electron emission microscopy studies are conducted on Au/Si and Cu/Si Schottky contacts fabricated on back-gated silicon-on-insulator wafers, allowing the electric field to be varied so that both electron (n)- and hole (p)-Schottky barrier heights can be measured at the same sample location. While the individual n- and p-Schottky barrier heights varied by more than 200 meV between the Au/Si and Cu/Si contacts, for a given sample they sum to within 15 meV of the same value, indicating that the individual variations are due to variations in a local surface dipole as compared with tip effects or variations in local composition.

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