Exciton localization in inhomogeneously broadened ZnO/MgxZn1−xO quantum wells | Zendy

Almamun Ashrafi | Zendy

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Exciton localization in inhomogeneously broadened ZnO/MgxZn1−xO quantum wells

Author(s) -

Almamun Ashrafi

Publication year - 2010

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3452379

Subject(s) - exciton , quantum well , biexciton , condensed matter physics , relaxation (psychology) , phonon , electric field , materials science , chemistry , physics , optics , quantum mechanics , psychology , social psychology , laser

Exciton localization in ZnO/MgxZn1−xO quantum wells (QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18–29 meV. The relaxation mechanism in ZnO/Mg0.23Zn0.77O QWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn0.77O QWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.

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