Electrical and optical properties of SnEuTe and SnSrTe films | Zendy

Akihiro Ishida | Zendy; Takuro Tsuchiya | Zendy; Tomohiro Yamada | Zendy; Daoshe Cao | Zendy; S. Takaoka | Zendy; Mohamed Rahim | Zendy; F. Felder | Zendy; H. Zogg | Zendy

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Electrical and optical properties of SnEuTe and SnSrTe films

Author(s) -

Akihiro Ishida,

Takuro Tsuchiya,

Tomohiro Yamada,

Daoshe Cao,

S. Takaoka,

Mohamed Rahim,

F. Felder,

H. Zogg

Publication year - 2010

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3446819

Subject(s) - spectral line , epitaxy , ternary alloy , materials science , optical spectra , ternary operation , electronic band structure , atmospheric temperature range , condensed matter physics , optoelectronics , alloy , analytical chemistry (journal) , chemistry , physics , thermodynamics , nanotechnology , metallurgy , layer (electronics) , astronomy , computer science , programming language , chromatography

The SnTe, Sn1−xEuxTe and Sn1−xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm−3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1−xEuxTe and Sn1−xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

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