Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device | Zendy

Yinyan Gong | Zendy; M. Ťapajna | Zendy; S. Bakalova | Zendy; Y Zhang | Zendy; James H. Edgar | Zendy; Y. Zhang | Zendy; Michael Dudley | Zendy; M. A. Hopkins | Zendy; Martin Kuball | Zendy

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Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Author(s) -

Yinyan Gong,

M. Ťapajna,

S. Bakalova,

Y Zhang,

James H. Edgar,

Y. Zhang,

Michael Dudley,

M. A. Hopkins,

Martin Kuball

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3443712

Subject(s) - heterojunction , materials science , optoelectronics , diode , gallium arsenide , chemical vapor deposition , band gap , semiconductor , capacitance , boron , wide bandgap semiconductor , semiconductor device , layer (electronics) , chemistry , nanotechnology , electrode , organic chemistry

B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively

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