First-principles study of type-I and type-VIII Ba8Ga16Sn30 clathrates
Author(s) -
Yasushi Kono,
Nobuyuki Ohya,
Takashi Taguchi,
Koichiro Suekuni,
T. Takabatake,
Setsuo Yamamoto,
Koji Akai
Publication year - 2010
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3437252
Subject(s) - seebeck coefficient , thermoelectric effect , semiconductor , type (biology) , condensed matter physics , electrical resistivity and conductivity , conduction band , electronic band structure , thermoelectric materials , thermal conductivity , thermal conduction , band gap , figure of merit , semimetal , charge carrier , conductivity , materials science , direct and indirect band gaps , chemistry , electron , thermodynamics , physics , optoelectronics , geology , composite material , quantum mechanics , paleontology
We calculated the electronic structures and the thermoelectric properties for type-I and type-VIII Ba8Ga16Sn30 (BGS) clathrates. The band structures show that type-I and type-VIII BGS are indirect semiconductors with band gaps of 0.51 eV and 0.32 eV, respectively. The calculated Seebeck coefficient of n-type type-I BGS is higher than that of n-type type-VIII BGS because of the larger density of states in type-I at the bottom of the conduction band. This is in good agreement with the experimental results. We also calculated the electrical conductivity and thermal conductivity due to charge carriers. Estimated thermoelectric figure of merit, ZT, exceeds 1.0 for both types.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom