Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films | Zendy

B. Dridi Rezgui | Zendy; A. Sibaï | Zendy; T. Nychyporuk | Zendy; M. Lemiti | Zendy; G. Brémond | Zendy; David Maestre | Zendy; Olivier Palais | Zendy

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Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

Author(s) -

B. Dridi Rezgui,

A. Sibaï,

T. Nychyporuk,

M. Lemiti,

G. Brémond,

David Maestre,

Olivier Palais

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3427386

Subject(s) - quantum dot , silicon nitride , plasma enhanced chemical vapor deposition , materials science , silicon , optoelectronics , chemical vapor deposition , solar cell , fabrication , nitride , nanotechnology , medicine , alternative medicine , pathology , layer (electronics)

The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell

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