Suppression of concentration quenching of Er-related luminescence in Er-doped GaN | Zendy

Shaoqiang Chen | Zendy; Benjamin Dierre | Zendy; Woong Lee | Zendy; Takashi Sekiguchi | Zendy; Shigeo Tomita | Zendy; Hiroshi Kudo | Zendy; Katsuhiro Akimoto | Zendy

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Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

Author(s) -

Shaoqiang Chen,

Benjamin Dierre,

Woong Lee,

Takashi Sekiguchi,

Shigeo Tomita,

Hiroshi Kudo,

Katsuhiro Akimoto

Publication year - 2010

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3421535

Subject(s) - cathodoluminescence , luminescence , photoluminescence , erbium , doping , materials science , quenching (fluorescence) , analytical chemistry (journal) , excitation , epitaxy , molecular beam epitaxy , optoelectronics , chemistry , fluorescence , nanotechnology , optics , physics , electrical engineering , chromatography , layer (electronics) , engineering

Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN

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